InSb is a narrow direct band gap semiconductor with an energy band gap of 0.17 eV at 300 K and 0.23 eV at 80 K. [8] Undoped InSb possesses the largest ambient-temperature electron mobility (78000 cm 2 /V⋅s), [9] electron drift velocity, and ballistic length (up to 0.7 μm at 300 K) [8] of any known … See more Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging See more InSb has the appearance of dark-grey silvery metal pieces or powder with vitreous lustre. When subjected to temperatures over 500 °C, it melts and decomposes, … See more • Thermal image detectors using photodiodes or photoelectromagnetic detectors • Magnetic field sensors using magnetoresistance or the Hall effect • Fast transistors (in terms of dynamic switching). This is due to the high carrier mobility of InSb. See more • National Compound Semiconductor Roadmap at the Office of Naval Research • Material safety data sheet Archived 2016-03-03 at the See more The intermetallic compound was first reported by Liu and Peretti in 1951, who gave its homogeneity range, structure type, and lattice constant. Polycrystalline ingots of InSb were prepared by Heinrich Welker in 1952, although they were not very pure by … See more InSb can be grown by solidifying a melt from the liquid state (Czochralski process), or epitaxially by liquid phase epitaxy, hot wall epitaxy or molecular beam epitaxy. It can also be grown … See more • Haynes, William M., ed. (2016). CRC Handbook of Chemistry and Physics (97th ed.). CRC Press. ISBN 9781498754293. See more WebInSb is a semiconductor material for optoelectronics, infrared detectors, Hall effect sensors, and electric power amplifiers. CdTe is a semiconductor material for infrared …
The structural and elastic properties of InSb1-xBix alloys
WebMay 14, 2024 · In InSb, the surface filling with the silicon oxide groups was not higher than 0.5. The drop of the d 0 values of InAs and InSb at Т p > 525 and 550 K, respectively, is … WebInSb NWs were synthesized at a relatively low temperature (typically at approximately 175 °C) in an ultrafast reaction time (1 min) using commercially available tris(2,4 … openly gay actress
Fig. 1 Photoluminescence spectra of InAs=InSb=GaSb (10=1=10 …
WebJun 7, 2024 · The band gap is a very important property of a semiconductor because it determines its color and conductivity. Many of the applications of semiconductors are related to band gaps: Narrow gap materials (Hg x Cd 1-x Te, VO 2, InSb, Bi 2 Te 3) are used as infrared photodetectors and thermoelectrics (which convert heat to electricity). WebBinary semiconductors (II–VI, III–V, and IV–VI) have received the most interest. This is mainly due to the ease in preparing tunable optical emissivity. Thiol-stabilized and hot … WebJan 1, 2011 · The recent realization of a crystalline binary semiconductor (InSb) core optical fiber opens the door to new possibilities for nonlinear fiber-based devices. … ipad charger very hot